CGD65A130S2-T13

CGD65A130S2-T13

Part number
CGD65A130S2-T13
Product Categories
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Describe
650V GAN HEMT, 130MOHM, DFN8X8.
Encapsulation
-
Package
Tape & Reel (TR)
ROHS status
Yes
Price
USD
Data sheet
-
Quantity
RFQ
In stock: 13352
Smallest : 3500
Multiple : 1
Quantity
Unit price
Price
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Purchase and inquiry
Specification
Transport
Data sheet
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V

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